Systems for improved efficiency of ball mount cleaning and methods for using the same

ABSTRACT

An embodiment system, configured to clean a semiconductor package assembly, may include a sprayer device including a plurality of nozzles configured to direct a pressurized cleaning fluid toward the semiconductor package assembly; a conveyor configured to move the semiconductor package assembly relative to the sprayer device along a first direction; and a dryer spatially displaced from the sprayer device and configured to direct a pressurized gas flow toward the semiconductor package assembly to remove cleaning fluid introduced by the sprayer device. Each of the plurality of nozzles may be displaced from one another along a second direction to thereby generate respective separate spray distribution patterns. Adjacent nozzles may be further displaced from one another along a third direction to thereby a reduce an overlap of adjacent spray distribution patterns relative to a configuration in which the adjacent nozzles are not displaced from one another along the third direction.

RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 17/723,982 entitled “Systems for Improved Efficiency of BallMount Cleaning and Methods for Using the Same,” filed on Apr. 19, 2022,the entire contents of which is hereby incorporated by reference for allpurposes.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cell phones, digital cameras, and otherelectronic equipment Semiconductor devices are typically fabricated bysequentially depositing insulating or dielectric layers, conductivelayers, and semiconductive layers over a semiconductor substrate, andpatterning the various material layers using lithography and etch toform circuit components and elements thereon. Dozens or hundreds ofintegrated circuits are typically manufactured on a single semiconductorwafer, and individual dies on the wafer are singulated by sawing betweenthe integrated circuits along a scribe line. The individual dies aretypically packaged separately, in multi-chip modules, or in other typesof packaging, for example. There is a continuing need for improvementsof semiconductor packages.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of this disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a vertical cross-sectional view of a semiconductor devicealong line AA′ in FIG. 1B, according to various embodiments.

FIG. 1B is a horizontal cross-sectional view of the semiconductor devicealong line BB′ in FIG. 1A, according to various embodiments.

FIG. 2A is a vertical cross-section view of a semiconductor device alongline AA′ in FIG. 2B, according to various embodiments.

FIG. 2B is a horizontal cross-sectional view of the semiconductor devicealong line BB′ in FIG. 2A, according to various embodiments.

FIG. 3A is a vertical cross-sectional view of a semiconductor packageassembly in a first configuration during a first stage of a cleaningprocess.

FIG. 3B is a vertical cross-sectional view of a semiconductor packageassembly in a second configuration during a second stage of a cleaningprocess.

FIG. 3C is a vertical cross-sectional view of a semiconductor packageassembly showing evidence of an incomplete cleaning process.

FIG. 4 is a top-down view of a system configured to clean asemiconductor package assembly, according to various embodiments.

FIG. 5 is a three-dimensional perspective view of the system of FIG. 4 ,according to various embodiments.

FIG. 6 is a vertical cross-sectional view of a portion of the system 400of FIGS. 4 and 5 , according to various embodiments.

FIG. 7A is a top perspective view of a conveyor belt, according tovarious embodiments.

FIG. 7B is a vertical cross-sectional view of the conveyer belt of FIG.7A, according to various embodiments.

FIG. 8A is a vertical cross-sectional view of a portion of the system ofFIGS. 4 to 6 illustrating a first sprayer device having a firstconfiguration, according to various embodiments.

FIG. 8B is a vertical cross-sectional view of a portion of the system ofFIGS. 4 to 6 illustrating a second sprayer device having a secondconfiguration, according to various embodiments.

FIG. 9A illustrates non-overlapping spray distribution patterns fromnozzles that are sufficiently separated, according to variousembodiments.

FIG. 9B illustrates an impact force distribution pattern from a singlenozzle, according to various embodiments.

FIG. 9C illustrates overlapping spray distribution patterns from nozzlesthat are closely spaced, according to various embodiments.

FIG. 10A illustrates a first sprayer device having a first plurality ofnozzles, according to various embodiments.

FIG. 10B illustrates a second sprayer device having a second pluralityof nozzles, according to various embodiments.

FIG. 10C is a close-up view of a portion of the second sprayer device ofFIG. 10B, according to various embodiments.

FIG. 11 is a three-dimensional perspective view of a portion of thesystem 400 of FIGS. 4 and 5 illustrating details of the dryer, accordingto various embodiments.

FIG. 12 is a side view of a portion of the dryer and a mounting bracket,according to various embodiments.

FIG. 13 is a graph showing a measured spray impact force generated bythe dryer, according to various embodiments.

FIG. 14 is a flowchart illustrating various operations of a method ofcleaning a semiconductor package assembly, according to variousembodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. Unless explicitly statedotherwise, each element having the same reference numeral is presumed tohave the same material composition and to have a thickness within a samethickness range.

Typically, in a semiconductor package, a number of semiconductorintegrated circuit (IC) dies (i.e., “chips”) may be mounted onto acommon substrate. The semiconductor package typically includes a housingthat encloses the IC dies to protect the IC dies from damage. Thehousing may also provide sufficient heat dissipation from thesemiconductor package. In some cases, the semiconductor package mayinclude a package lid including a thermally-conductive material (e.g., ametal or metal alloy, such as copper). The package lid may be locatedover the IC dies. Heat from the IC dies may be transferred from theupper surfaces of the IC dies into the package lid and may be ultimatelydissipated to the environment. The heat may optionally be dissipatedthrough a heat sink that may be attached to or may be integrally formedwith the lid.

A semiconductor package assembly, which may include one or moreintegrated circuit dies coupled to a package substrate and covered by apackage lid, may undergo cleaning to remove flux residue and othercontaminants that may arise during a reflow operation that may beperformed to couple the one or more integrated circuit dies to thepackage substrate. A cleaning operation may introduce a pressurizedcleaning fluid to remove flux residue and other contaminants. Thecleaning process may further introduce a flow of pressurized gas toremove cleaning fluid and to dry internal and external surfaces of thepackage assembly. Disclosed systems may provide an improved cleaningefficiency by providing sprayer devices that achieve a more uniformdistribution of pressurized cleaning fluid that may be directed to thesemiconductor package assembly. Disclosed systems may further improvecleaning efficiency by providing a dryer having an jet air knife thatprovides a high pressure gas flow that may have increased dryingefficiency and an increased efficiency of cleaning fluid removal from asemiconductor package assembly (including cleaning fluid removal fromspaces within the package lid).

According to various embodiments of this disclosure, a system configuredto clean a semiconductor package assembly is provided. The system mayinclude a sprayer device including a plurality of nozzles configured todirect a pressurized cleaning fluid toward the semiconductor packageassembly; a conveyor configured to move the semiconductor packageassembly relative to the sprayer device along a first direction; and adryer spatially displaced from the sprayer device along the firstdirection and configured to direct a pressurized gas flow at thesemiconductor package assembly to remove cleaning fluid introduced bythe sprayer device. Each of the plurality of nozzles may be displacedfrom one another along a second direction to thereby generate respectiveseparate spray distribution patterns. Adjacent nozzles may be displacedfrom one another along a third direction perpendicular to the seconddirection to thereby a reduce an overlap of adjacent spray distributionpatterns relative to a configuration in which the adjacent nozzles arenot displaced from one another along the third direction.

In a further embodiment, a system may be configured to clean asemiconductor package assembly. Various embodiments systems may includea sprayer device that include a plurality of fluidic nozzles configuredto direct a pressurized cleaning fluid at the semiconductor packageassembly; a conveyor configured to move the semiconductor packageassembly relative to the sprayer device along a first direction; and adryer spatially displaced from the sprayer device along the firstdirection and configured to direct a pressurized gas flow toward thesemiconductor package assembly to remove cleaning fluid introduced bythe sprayer device. The dryer may be configured as a jet air knifeconfigured to generate the pressurized gas flow having a pressure in arange from approximately 0.02 MPa to approximately 0.08 MPa at adistance from the semiconductor package assembly that is in a range fromapproximately 0 mm to approximately 20 mm.

An embodiment method of cleaning a semiconductor package assembly mayinclude moving the semiconductor package assembly along a firstdirection relative to a sprayer device and a dryer using a conveyor,wherein the sprayer device and the dryer are spatially displacedrelative to one another along the first direction such that thesemiconductor package assembly moves past the sprayer device beforemoving past the dryer; directing a pressurized cleaning fluid toward thesemiconductor package assembly, using the sprayer device, while thesemiconductor package assembly moves past the sprayer device; anddirecting a pressured gas flow toward the semiconductor packageassembly, using the dryer, while the semiconductor package assemblymoves past the dryer. Directing the pressurized cleaning fluid towardthe semiconductor package assembly may further includes generating aplurality of spray distribution patterns using a plurality of fluidicnozzles that are displaced from one another along a second direction.Adjacent nozzles may be further displaced from one another along adirection perpendicular to the second direction to thereby a reduce anoverlap of adjacent spray distribution patterns relative to aconfiguration in which the adjacent nozzles are not displaced from oneanother along the direction perpendicular to the second direction.

FIG. 1A is a vertical cross-section view of a semiconductor device 100according to various embodiments. FIG. 1B is a horizontal cross-sectionview of the semiconductor device 100 taken along line B-B′ in FIG. 1A.The view of FIG. 1A is taken along the line A-A′ in FIG. 1B. Thesemiconductor device 100 may include one or more integrated circuit (IC)semiconductor devices. For example, the semiconductor device 100 mayinclude a first plurality of semiconductor dies 102 and a secondplurality of semiconductor dies 104. In various embodiments, eachsemiconductor die 102 may be configured as a three-dimensional device,such as a three-dimensional integrated circuit (3DICs), a system-on-chip(SOC) device, or a system-on-integrated-circuit (SoIC) device.

Each of the semiconductor dies 102 may be formed by placing chips overother chips on a semiconductor wafer level. These three-dimensional (3D)devices may provide improved integration density, yield and otheradvantages, such as faster speeds and higher bandwidths, due to adecreased length of interconnects between the stacked chips. In someembodiments, one of the semiconductor dies 102 may also be referred toas a “first die stack.” In some embodiments, each of the semiconductordies 102 may be dies or chips, such as logic dies, or power managementdies.

In the semiconductor device 100 illustrated in FIGS. 1A and 1B, theplurality of semiconductor dies 102 includes four first die stacks, eachof which may be configured as a system-on-chip (SOC) device. In variousembodiments, the semiconductor dies 102 may be adjacent to one anotherand may be located in a central portion of the semiconductor device 100.The semiconductor device 100 may further include one or more additionalsemiconductor dies 104. In some embodiments, the one or more additionalsemiconductor dies 104 may be three-dimensional (3D) IC semiconductordevices, and may also be referred to as “second die stacks.” In someembodiments, the additional semiconductor dies 104 may each be asemiconductor memory device, such as a high bandwidth memory (HBM)device.

In the embodiment shown in FIGS. 1A and 1B, the plurality of additionalsemiconductor dies 104 includes eight (8) second die stacks, each ofwhich may be an HBM device. The additional semiconductor dies 104 may belocated on a periphery around the semiconductor dies 102, as shown inFIG. 1B. A molding 106, which may include an epoxy-based material, maybe located around the periphery of the semiconductor dies 102 and theadditional semiconductor dies 104. Although the embodiment illustratedin FIGS. 1A and 1B includes four (4) semiconductor dies 102 and eight(8) additional semiconductor dies 104, greater or fewer die stacks maybe included in the package.

Referring again to FIG. 1A, the semiconductor dies 102 and theadditional semiconductor dies 104 may be mounted on an interposer 108.In some embodiments, the interposer 108 may be an organic interposerincluding a polymer dielectric material (e.g., a polyimide material)having a plurality of metal interconnect structures extendingtherethrough. In other embodiments, the interposer 108 may be asemiconductor interposer, such as a silicon interposer, having aplurality of interconnect structures (e.g., through-silicon vias)extending therethrough. Other suitable configurations for the interposerare contemplated within the scope of the disclosure. The interposer 108may include a plurality of conductive bonding pads (not shown) on upperand lower surfaces of the interposer 108 and a plurality of conductiveinterconnects (not shown) extending through the interposer 108 betweenthe upper and lower bonding pads of the interposer 108.

The conductive interconnects may distribute and route electrical signalsbetween IC semiconductor devices (e.g., semiconductor dies 102 andadditional semiconductor dies 104) and a package substrate 110. Thus,the interposer 108 may also be referred to as redistribution layers(RDLs). A plurality of metal bumps 112, such as micro-bumps, mayelectrically connect conductive bonding pads on the bottom surfaces ofthe semiconductor dies 102 and additional semiconductor dies 104 to theconductive bonding pads on the upper surface of the interposer 108. Inone non-limiting embodiment, metal bumps 112 in the form of micro-bumpsmay include a plurality of first metal stacks, such as a plurality ofCu—Ni—Cu stacks, located on the bottom surfaces of the semiconductordies 102 and the additional semiconductor dies 104. A correspondingplurality of second metal stacks (e.g., Cu—Ni—Cu stacks) may be locatedon the upper surface of the interposer 108. A solder material, such astin (Sn), may be located between respective first and second metalstacks to electrically connect the semiconductor dies 102 and theadditional semiconductor dies 104 to the interposer 108. Other suitablematerials for the metal bumps 112 are within the contemplated scope ofthis disclosure.

A first underfill material portion 114 may be provided in the spacessurrounding the metal bumps 112 and between the bottom surfaces of thesemiconductor dies 102, the additional semiconductor dies 104, and theupper surface of the interposer 108. The first underfill materialportion 114 may also be provided in the spaces laterally separatingadjacent die stacks (i.e., semiconductor dies 102 and additionalsemiconductor dies 104) of the semiconductor device 100. Thus, the firstunderfill material portion 114 may extend over side surfaces of thesemiconductor dies 102 and/or the additional semiconductor dies 104, asshown in FIG. 1A. In various embodiments, the first underfill materialportion 114 may include an epoxy-based material, which may include acomposite of resin and filler materials. Other underfill materials arewithin the contemplated scope of this disclosure.

The interposer 108 may be located on a package substrate 110, which mayprovide mechanical support for the interposer 108 and the ICsemiconductor devices (e.g., semiconductor dies 102 and additionalsemiconductor dies 104) that are mounted thereon. The package substrate110 may include a suitable material, such as a semiconductor material(e.g., a semiconductor wafer, such as a silicon wafer), a ceramicmaterial, an organic material (e.g., a polymer and/or thermoplasticmaterial), a glass material, combinations thereof, etc. Other suitablesubstrate materials are within the contemplated scope of thisdisclosure. In various embodiments, the package substrate 110 mayinclude a plurality of conductive bonding pads in an upper surface ofthe package substrate 110. A plurality of metal bumps 116, such as C4solder bumps, may electrically connect conductive bonding pads on thebottom surface of the interposer 108 to the conductive bonding pads onthe upper surface of the package substrate 110. In various embodiments,the metal bumps 116 may include a suitable solder material, such as tin(Sn).

A second underfill material portion 118 may be provided in the spacessurrounding the metal bumps 116 and between the bottom surface of theinterposer 108 and the upper surface of the package substrate 110. Invarious embodiments, the second underfill material portion 118 mayinclude an epoxy-based material, which may include a composite of resinand filler materials. The second underfill material portion 118 may bethe same material or a different material as the first underfillmaterial portion 114.

A package lid 120 may be disposed over the upper surfaces of the ICsemiconductor devices (e.g., the semiconductor dies 102 and theadditional semiconductor dies 104). The package lid 120 may alsolaterally surround the IC semiconductor devices (e.g., the semiconductordies 102 and the additional semiconductor dies 104) such that thesemiconductor dies 102 and the additional semiconductor dies 104 arefully-enclosed by the combination of the package substrate 110 and thepackage lid 120. In other embodiments, the package lid 120 may includevent hole to allow equilibration of gases internal and external to thepackage lid 120, as described in greater detail with reference to FIG.2B, below.

The package lid 120 may be attached to an upper surface of the packagesubstrate 110 via an adhesive 122. In various embodiments, the adhesive122 may be a thermally-conductive adhesive, such as an SW4450 adhesivefrom Dow Chemical Company. Other suitable adhesive materials are withinthe contemplated scope of this disclosure. In some embodiments, thepackage lid 120 may be integrally formed or may include pieces. Forexample, the package lid 120 may include a ring portion (not shown)surrounding the semiconductor dies 102 and the additional semiconductordies 104, a cover portion covering the ring portion, the semiconductordies 102, and the additional semiconductor dies 104, and an adhesive(not shown) connecting the cover portion to the ring portion.

In some embodiments, a thermal interface material layer 124 may bedisposed between an upper surface of each of the IC semiconductordevices (e.g., the semiconductor dies 102 and the additionalsemiconductor dies 104) and an underside of the package lid 120. Invarious embodiments, the thermal interface material layer 124 mayinclude a gel-type thermal interface material having a relatively highthermal conductivity. Other suitable materials for the thermal interfacematerial layer 124 are within the contemplated scope of this disclosure.In some embodiments, the thermal interface material layer 124 mayinclude a single thermal interface material piece covering both thesemiconductor dies 102 and the additional semiconductor dies 104, or twoor more thermal interface material pieces corresponding to each of thesemiconductor dies 102 and the additional semiconductor dies 104.

In some embodiments, a heat sink 126 may be provided on an upper surfaceof the package lid 120. The heat sink 126 may include fins or otherfeatures that may be configured to increase a surface area between theheat sink 126 and a cooling fluid, such as ambient air. In someembodiments, the heat sink 126 may be a separate component that may beattached to an upper surface of the package lid 120. Alternatively, theheat sink 126 may be integrally formed with the package lid 120. Inembodiments in which the heat sink 126 is a separate component from thepackage lid 120, a second thermal interface material layer 128 may belocated between the upper surface of the package lid 120 and a bottomsurface of the heat sink 126. In various embodiments, the second thermalinterface material layer 128 may include a gel-type thermal interfacematerial having a relatively high thermal conductivity. Other suitablematerials for the second thermal interface material layer 128 are withinthe contemplated scope of this disclosure. The heat sink 126 may includea suitable thermally-conductive material, such as a metal or metalalloy.

In various embodiments, a central region 130 of the semiconductor device100 may be a region of the semiconductor device 100 that includes arelatively higher density of the one or more integrated circuit (IC)semiconductor devices, such as the semiconductor dies 102 and theadditional semiconductor dies 104 shown in FIGS. 1A and 1B. Thesemiconductor device 100 may include peripheral regions 132. Each of theperipheral regions 132 may be a region of the semiconductor device 100that has a relatively lower density of integrated circuit (IC)semiconductor devices, including a region that does not include any ICsemiconductor devices.

In the embodiment of FIGS. 1A and 1B, excessive heat accumulation in thesemiconductor device 100 may be more likely to occur in the centralregion 130 of the semiconductor device 100 that includes the highestdensity of IC semiconductor devices (e.g., the semiconductor dies 102and the additional semiconductor dies 104) than in the peripheralregions 132 of the semiconductor device 100. This may be because themajority of the heat in the semiconductor device 100 is generated by theIC semiconductor devices (e.g., the semiconductor dies 102 and theadditional semiconductor dies 104) in the central region 130 of thesemiconductor device 100. As such, heat transfer through the package lid120 may occur primarily along the vertical direction (i.e., thedirection of the z-axis in FIG. 1A) rather than spreading horizontallythrough the semiconductor device 100 (i.e., along the x-axis and y-axisdirections in FIGS. 1A and 1B). Thus, the portion of the package lid 120overlying the IC semiconductor devices (e.g., 102, 104) in the centralregion 130 of the semiconductor device 100 may be the hottest portion ofthe package lid 120.

The concentration of heat generating elements and the hottest portion ofthe package lid 120 being located in the central region may result inoverheating and damage to the semiconductor device 100 if the rate ofheat loss from the central region 130 of the semiconductor device 100 isnot sufficiently high. In practice, this means that the package lid 120may include a material having a very high thermal conductivity, such ascopper, which has a thermal conductivity of about 398 W/m·K. However,such high-thermal conductivity materials are typically relativelyexpensive, which may increase the costs of the semiconductor device 100.

FIG. 2A is a vertical cross-section view of a semiconductor device,according to various embodiments. The semiconductor device may beconfigured as a semiconductor package assembly 200. The semiconductorpackage assembly 200 may include a package substrate 110, asemiconductor die 102 coupled to the package substrate 110, a packagelid 120 attached to the package substrate 110 (e.g. with an adhesive122) and covering the semiconductor die 102, and a thermal interfacematerial layer 124 located between a top surface of the semiconductordie 102 and an internal surface of the package lid 120.

The semiconductor package assembly 200 may further include a pluralityof metal bumps 112, such as micro-bumps, which may electrically connectconductive bonding pads (not shown) on a bottom surface of thesemiconductor die 102 to conductive bonding pads (not shown) on an uppersurface of the package substrate 110. An underfill material portion 114may be provided in the spaces surrounding the metal bumps 112 andbetween the bottom surface of the semiconductor die 102 and the topsurface of the package substrate 110. A plurality of metal bumps 116,such as C4 solder bumps, may electrically connect conductive bondingpads on a bottom surface of the package substrate 110. In variousembodiments, the metal bumps 116 may include a suitable solder material,such as tin (Sn) and may be configured to be electrically connected toconductive bonding pads on another device component such as a printedcircuit board.

The semiconductor package assembly 200 may further include a dam 134formed on the internal surface 121 of the package lid 120. The dam 134may be configured to constrain the thermal interface material layer 124on one or more sides of the semiconductor die 102 such that the thermalinterface material layer 124 may be located within a predeterminedvolume between the top surface of the semiconductor die 102 and theinternal surface 121 of the package lid 120. The presence of such a dam134 may be advantageous for certain types of thermal interface materiallayer 124. For example, if the thermal interface material layer 124 is aliquid or gel, the dam 134 may prevent the thermal interface materiallayer 124 from flowing away from the top surface of the semiconductordie.

The dam 134 may also be advantageous for use with certain metallicthermal interface materials. For example, a solder material may be usedas a thermal interface material layer 124. In this regard, forming thethermal interface material layer 124 may include forming a layer ofsolder material in the predetermined volume between the top of thesemiconductor die 102 and the internal surface 121 of the package lid120. A reflow operation may then be performed to melt the soldermaterial so that the solder material forms a uniform layer. During thereflow operation, the dam 134 may prevent the molten solder materialfrom flowing away from the top surface of the semiconductor die 102.Depending on the geometry of the semiconductor package assembly 200, thedam 134 may be formed on two sides of the semiconductor die 102, asshown in FIG. 2A, or the dam 134 may be formed on greater or fewer sidesof the semiconductor die 102, as described in greater detail below.

FIG. 2B is a horizontal cross-sectional view of the semiconductorpackage assembly 200 of FIG. 2A, according to various embodiments. Theline B-B′ in FIG. 2A illustrates the cross section illustrated in FIG.2B. In this regard, the cross section B-B′ in FIG. 2A cuts through thepackage lid 120, through the dam 134, and through the thermal interfacematerial layer 124 that may be located between the top surface of thesemiconductor die 102 and the internal surface 121 of the package lid120. The line A-A′ in FIG. 2B indicates the vertical cross-sectionalview of FIG. 2A. While FIG. 2A only shows a single semiconductor die(e.g., semiconductor die 102), the semiconductor package assembly 200may further include a second semiconductor die 104 a and a thirdsemiconductor die 104 b or even more dies. Each of the secondsemiconductor die 104 a and the third semiconductor die 104 b may alsoinclude a thermal interface material layer 128, as shown in FIG. 2B.

The thermal interface material layer 128 over the second semiconductordie 104 a and the third semiconductor die 104 b may be the same as thethermal interface material 124 over the semiconductor die 102.Alternatively, the thermal interface material layer 128 over the secondsemiconductor die 104 a and the third semiconductor die 104 b may bedifferent from the thermal interface material layer 124 over thesemiconductor die 102. For example, as described above with reference toFIGS. 1A and 1B, the heat dissipation requirements of the central region130 may be different from the heat dissipation requirements ofperipheral regions 132 (e.g., see FIG. 1A). As such, the thermalinterface material layer 124 placed over the semiconductor die 102 maybe chosen to have different properties from the thermal interfacematerial layer 128 placed over the second semiconductor die 104 a andthe third semiconductor die 104 b. For example, the thermal interfacematerial layer 124 placed over the semiconductor die 102 may have ahigher thermal conductivity and/or higher heat capacity than the thermalinterface material layer 128 placed over the second semiconductor die104 a and the third semiconductor die 104 b.

As shown in FIG. 2B, the second semiconductor die 104 a and the thirdsemiconductor die 104 b may be respectively located adjacent to a firstvent hole 136 a and a second vent hole 136 b of the package lid. Assuch, it may be advantageous to use a thermal interface material 128that may not require the presence of a dam to constrain the thermalinterface material 128 so that thermal interface material 128 may notleak out of the first vent hole 136 a and the second vent hole 136 b.

In the embodiment of FIGS. 2A and 2B, it may be advantageous toconfigure the dam 134 to be located next to two edges of thesemiconductor die 102. For example, the thermal interface material layer124 placed over the semiconductor die 102 may be a liquid or may be asolder material that may flow when a reflow operation is performed. Asshown in FIG. 2A, the dam 134 may have portions respectively placed onthe right and left edges of the semiconductor die 102. Similarly, inFIG. 2B, the two portions of the dam 134 may be located on two edges ofthe semiconductor die 102 illustrated in the top and bottom of FIG. 2B.This configuration of the dam 134 may prevent the thermal interfacematerial layer 124 from flowing away from the semiconductor die 102along the respective edges. In the configuration of FIG. 2B, thepresence of the additional semiconductor dies 104 may prevent thethermal interface material layer 124 from flowing away from theremaining edges of the semiconductor die 102. Thus, geometry of the dam134 may vary according to the placement of the various semiconductordies.

In further embodiments, the dam 134 may be located on one or more sides,such as one side, two sides, three sides, or on all four sides of asemiconductor die 102 (not shown). Further, the dam 134 may beconfigured as a single continuous structure (not shown) or the dam 134may have several separate pieces (not shown). In further embodiments,the dam 134 may be omitted in embodiments using suitable thermalinterface materials that do not need to be constrained.

FIGS. 3A to 3C provide vertical cross-sectional views of a semiconductorpackage assembly 200 in various stages of a cleaning process. In thisregard, the semiconductor package assembly 200 may be cleaned to removevarious contaminants that may accumulate during the process ofassembling the semiconductor package assembly 200. In this regard, thesemiconductor die 102 may be coupled to the package substrate 110 (e.g.,see FIG. 2A) by performing a reflow process to thereby bond the metalbumps 112 to bonding pads (not shown) on a bottom surface of thesemiconductor die 102 to conductive bonding pads (not shown) on an uppersurface of the package substrate 110. A solder material, such as tin(Sn) and may be used to bond the metal bumps to the correspondingbonding pads on the package substrate 110. A flux material may be usedin the reflow process to remove metal oxides from the metal bumps 112and bonding pads. As such, the semiconductor package assembly 200 mayundergo a cleaning process to remove excess flux material. In thisregard, flux residue and other contaminants may accumulate on internaland external surfaces of the package lid 120.

As shown in FIG. 3A, a first stage of a cleaning process may includedirecting a pressurized cleaning fluid 302 toward the semiconductorpackage assembly 200. In an example embodiment, deionized (DI) water maybe used as the pressurized cleaning fluid 302. Other suitable cleaningfluids are contemplated within the scope of the disclosure in otherembodiments. The pressurized cleaning fluid 302 may be generated by oneor more sprayer devices (not shown), as described in greater detailbelow. The one or more sprayer devices may be configured to introducethe pressurized cleaning fluid 302 from above the semiconductor packageassembly 200, from below the semiconductor package assembly 200, or fromboth above and below the semiconductor package assembly 200, as shown.The pressurized cleaning fluid 302 may act to remove flux residue andother contaminants from the semiconductor package assembly 200.

In a second stage of the cleaning process, a pressurized gas 304 flowmay be directed at the semiconductor package assembly 200 to therebyremove remaining cleaning fluid 302, to dry surfaces of the packagesubstrate 110, and to dry internal and external surfaces of the packagelid 120. As described above, the package lid 120 may include a firstvent hole 136 a and a second vent hole 136 b (e.g., see FIG. 2B) thatmay be configured to allow outgassing and pressure equalization betweeninside and outside surfaces of the package lid 120. The presence of thefirst vent hole 136 a and a second vent hole 136 b, however, may allow acertain amount of cleaning fluid 302 to be trapped inside the packagelid 120. The pressurized gas 304 flow may then be used to remove trappeddeposits of cleaning fluid and to dry internal and external surfaces ofthe semiconductor package assembly 200.

A certain pressure of the pressurized cleaning fluid 302 and thepressurized gas 304 may be applied to remove some or all contaminants.Further, the cleaning process may be performed for a certain time toremove some or all contaminants. In situations in which the cleaningprocess is insufficient, however, certain defects may remain in or onsurfaces of the semiconductor package assembly 200. As shown in FIG. 3C,for example, water marks 308 may remain after an insufficient cleaningprocess. Other defects may include portions of remaining cleaning fluid302 that may remain on surfaces of the semiconductor package assembly200 (e.g., see FIG. 3B) or may be trapped within the package lid 120.Various embodiment systems and methods are provided that may allow ofincreased cleaning efficiency of a semiconductor package assembly 200,as described in greater detail, below.

FIG. 4 is a top down view of a system 400 configured to clean asemiconductor package assembly 200, according to various embodiments.One or more semiconductor package assemblies 200 may be provided on aconveyor (e.g., see FIGS. 7A and 7B and related description) that may beconfigured to move the one or more semiconductor package assemblies 200through the system 400 along a first direction (e.g., the x-direction inFIG. 4 ). The conveyor may include a conveyor belt (e.g., see FIGS. 7Aand 7B) and a plurality of rollers 404 that are configured to move theconveyor belt. The semiconductor package assemblies 200 may be mountedin one or more holders 410 (e.g., one or more “boats”) that may beconfigured to securely hold the semiconductor package assemblies 200while the semiconductor package assemblies 200 are moved through thesystem 400.

The system 400 may include a sprayer device 402 and a dryer 406. Asshown, the dryer 406 may be spatially displaced from the sprayer device402 along the first direction such that the semiconductor packageassembly 200 may be moved by the conveyor past the sprayer device 402before moving past the dryer 406. As described in greater detail, below,the sprayer device 402 may include a plurality of nozzles (e.g., seeFIGS. 6 and 8A to 10C) configured to direct a pressurized cleaning fluid302 toward the semiconductor package assembly 200. The dryer 406 may beconfigured to direct a pressurized gas flow 304 at the semiconductorpackage assembly 200 to remove cleaning fluid 302 introduced by thesprayer device 402, as described in greater detail, below. The system400 may further include a baffle 412 that is secured by a baffle holder414. The baffle 412 may act as a partition to separate a wet portion(housing the sprayer device 402) of the system 400 from a dry portion(housing the dryer 406).

FIG. 5 is a three-dimensional perspective view of the system 400 of FIG.4 , according to various embodiments. As shown, the system 400 mayinclude the sprayer device 402, the dryer 406 and the plurality ofrollers 404. As described above, the baffle 412 may separate a wetportion (housing the sprayer device 402) of the system 400 from a dryportion (housing the dryer 406). The baffle 412 may include a baffleopening 416 at a bottom portion of the baffle 412. The baffle opening416 may be configured to allow a conveyor belt (e.g., see FIGS. 7A and7B) to pass therethrough. As such, one or more semiconductor packageassemblies 200 may be moved by the rollers 404 on the conveyor belt fromthe wet portion through the baffle opening 416 to the dry portion.

The sprayer device 402 may include one or more a fluidic conduit 418extending along a second direction (i.e., the y-direction in FIG. 5 ). Aplurality of nozzles 420 may be attached, and fluidically coupled, tothe fluidic conduit 418. As described in greater detail below (e.g., seeFIGS. 8A, 8B, and 10A to 10C), the plurality of nozzles 420 may bedisplaced from one another along the second direction to therebygenerate respective separate spray distribution patterns. The separatespray distribution patterns may partially or completely overlap to forma distribution of pressurized cleaning fluid 302 that extends along thesecond direction (i.e., the y-direction).

FIG. 6 is a vertical cross-sectional view of a portion of the system 400of FIGS. 4 and 5 , according to various embodiments. The view of FIG. 6is taken along the first direction (i.e., the x-direction in FIGS. 4 and5 ) and illustrates relative dimensions of an example embodiment. Inthis example embodiment, the sprayer device 402 generates a firstspatial distribution of pressurized cleaning fluid 302 a and a secondspatial distribution of pressurized cleaning fluid 302 b. The firstspatial distribution of pressurized cleaning fluid 302 a and the secondspatial distribution of pressurized cleaning fluid 302 b may begenerated by respective individual nozzles (not shown) or may each begenerated by a respective plurality of nozzles (not shown), as describedin greater detail, below.

As shown, a first holder 410 a may be configured to hold a firstsemiconductor package assembly 200 a and a second semiconductor packageassembly 200 b. Similarly, a second holder 410 b may be configured tohold a third semiconductor package assembly 200 c and a fourthsemiconductor package assembly 200 d. The conveyor may be configured tomove the first holder 410 a and the second holder 410 b in a directionperpendicular to the plane of FIG. 6 (i.e., toward the observer) suchthat the first spatial distribution of pressurized cleaning fluid 302 ais directed toward the first semiconductor package assembly 200 a andthe second semiconductor package assembly 200 b, and the second spatialdistribution of pressurized cleaning fluid 302 b is directed toward thethird semiconductor package assembly 200 c and the fourth semiconductorpackage assembly 200 d. Also as shown, the first holder 410 a and thesecond holder 410 b may be separated from one another by a certaindistance (e.g., 5 cm in this embodiment). Similarly, the first spatialdistribution of pressurized cleaning fluid 302 a and the second spatialdistribution of pressurized cleaning fluid 302 b may be spatiallyseparated so as to be non-overlapping.

FIG. 7A is a top perspective view of a conveyor belt 702, and FIG. 7B isa vertical cross-sectional view of the conveyor belt 702 of FIG. 7A,according to various embodiments. As shown in FIG. 7A, the conveyor belt702 may be made of a mesh material, which may be configured to supportone or more semiconductor package assemblies 200. For example, theconveyor belt 702 may be formed of a nylon mesh material. Other conveyorbelt materials are within the contemplated scope of disclosure. As such,the conveyor belt 702 may be flexible and may allow pressurized cleaningfluid 302 and pressurized gas 304 to be directed toward the one or moresemiconductor package assemblies 200 from above, from below, or fromboth above and below the semiconductor package assemblies 200, asdescribed above with reference to FIGS. 3A and 3B.

As shown in FIG. 7B, the conveyor belt 702 may include a first portion702 a and a second portion 702 b such that the one or more semiconductorpackage assemblies 200 may be sandwiched between the first portion 702 aand the second portion 702 b. As shown, the semiconductor packageassemblies 200 may each be held by one or more holders 410. The conveyorbelt 702 may be held under tension against one or more rollers 404. Assuch, the one or more rollers 404 may make frictional contact with theconveyor belt 702. In this way, when the rollers 404 are caused torotate by a motor (not shown) they may impart a force to the conveyorbelt 702 to thereby move the conveyor belt 702 along the first direction(i.e., along the x-direction). The conveyor belt 702 may be furtherconfigured to position the semiconductor package assembly at a distancefrom the plurality of nozzles that is in a range from approximately 0 mmto approximately 50 mm (e.g., see FIGS. 8A and 8B and relateddescription).

FIG. 8A is a vertical cross-sectional view of a portion of the system ofFIGS. 4-6 illustrating a first sprayer device 402 a having a firstconfiguration, and FIG. 8B is a vertical cross-sectional view of aportion of the system of FIGS. 4-6 illustrating a second sprayer device402 b having a second configuration, according to various embodiments.As shown, each of the first sprayer device 402 a and the second sprayerdevice 402 b include a fluidic conduit 418 extending along the seconddirection (i.e., y-direction) and configured to supply the pressurizedcleaning fluid 302 to the plurality of nozzles 420.

The nozzles 420 a in the first sprayer device 402 a produce a firstspatial distribution of pressurized cleaning fluid 302 a at a firstdistance of 60 mm and a flow rate of 1.5 liters per minute (LPM), asshown in FIG. 8A. The nozzles 420 b in the second sprayer device 402 bare more closely spaced and produce a second spatial distribution ofpressurized cleaning fluid 302 b. As shown, the second spatialdistribution of pressurized cleaning fluid 302 b may provide a moreuniform distribution of pressurized cleaning fluid 302 b. The secondsprayer device 402 b may further provide a higher flow rate (e.g., 4.86LPM) and a closer distance (e.g., 35 mm). In certain embodiment, thesecond sprayer device 402 b may provide a more efficient process forcleaning the semiconductor package assemblies. The overlap of spraydistribution patterns from adjacent nozzles 420 b, however, may causenon-uniformities in the flow of pressurized cleaning fluid 302 b, asdescribed in greater detail, below.

FIG. 9A illustrates non-overlapping spray distribution patterns fromnozzles 420 that are sufficiently separated, FIG. 9B illustrates animpact force distribution pattern 902 from a single nozzle 420, and FIG.9C illustrates overlapping spray distribution patterns from nozzles 420that are closely spaced, according to various embodiments. A non-uniformdistribution of pressurized cleaning fluid 302 may be generated in bothconfigurations shown in FIGS. 9A and 9C. In the configuration of FIG.9A, for example, there may be a maximum impact force directly under eachnozzle 420 (e.g., see the force distribution 902 in FIG. 9B), whilethere may be a minimum of impact force in a region 904 where the spraydistribution patterns do not overlap. In the configuration of FIG. 9Cthere is partial overlap of the spray distribution patterns fromadjacent nozzles 420 in a region 906 between adjacent nozzles 420. Assuch, the minimum value of impact force between nozzles 420 may have agreater value for the configuration of FIG. 9C than for theconfiguration of FIG. 9A. However, if the nozzles 420 in theconfiguration of FIG. 9C overlap too much there may be additional maximaof the impact force in regions 906 where the spray distribution patternsoverlap. Various embodiments, described below, solve the problem ofgenerating a uniform distribution of pressurized cleaning fluid 302 byvarying the relative position of adjacent nozzles 420 in both the seconddirection (i.e., the y-direction) and in a direction (e.g., thex-direction or other direction) perpendicular to the second direction.

FIG. 10A illustrates a first sprayer device 402 a having a firstplurality of nozzles 420 a, FIG. 10B illustrates a second sprayer device402 b having a second plurality of nozzles 420 b, and FIG. 10Cillustrates a close-up view of a portion of the second sprayer device,according to various embodiments. The first sprayer device 402 a has afluidic conduit 418 having a first plurality of nozzles 420 a having afirst spacing and the second sprayer device 402 b has a fluidic conduit418 having a second plurality of nozzles 420 b having a closer spacing.The spacing of the first plurality of nozzles 420 a may correspond tothe non-overlapping spray distribution patterns described above withreference to FIGS. 8A and 9A. The spacing of the second plurality ofnozzles 420 b may correspond to the overlapping spray distributionpatterns described above with reference to FIGS. 8B and 9C. To reducenon-uniformities do to overlap of adjacent spray distribution patterns,however, the nozzles 420 b of FIG. 10B may include an additionaldisplacement of every other nozzle in a third direction 1002 that isperpendicular to the second direction.

As shown in FIGS. 10B and 10C, the fluidic conduit 418 may form acylindrical tube with a longitudinal axis that is oriented along thesecond direction (e.g., along the y-direction). A first plurality ofnozzles 420 b 1 may be aligned with one another along a radialdirection, of the cylindrical tube, the radial direction beingperpendicular to the longitudinal axis. In this example, the radialdirection may coincide with the z-direction in FIGS. 10A and 10B. Asecond plurality of nozzles 420 b 2 may be located between adjacent onesof the first plurality of nozzles 420 b 1, as shown in FIG. 10C. Thesecond plurality of nozzles 420 b 2 may be displaced along a thirddirection 1002 perpendicular to the radial direction relative to thefirst plurality of nozzles 420 b 1. For example, each of the secondplurality of nozzles 420 b 2 may be displaced along the first direction(i.e., the x-direction) in FIG. 10B. In some embodiments, all of thenozzles (420 b 1, 420 b 2) may be pointing downwardly (i.e., along thez-direction) and may be separated from one another along the seconddirection (i.e., the y-direction). Each of the second plurality ofnozzles 420 b 2 may be displaced slightly along the direction 1002,which may coincide with the first direction (i.e., the x-direction inFIGS. 10A and 10B), as shown in FIG. 10C. A more uniform spatialdistribution of pressurized cleaning fluid 302 may thus be formed byvarying the relative spacing of adjacent nozzles (420 b 1, 420 b 2) intwo directions.

Also as shown in FIG. 10C, plurality of nozzles (420 b 1, 420 b 2) mayhave an asymmetric shape 1004 such that each spray distribution patternhas a first spatial extent along the first direction (i.e., thex-direction) that is less than a second spatial extent along the seconddirection (i.e., the y-direction) and each spray distribution patternmay subtend an angle that is in a range from approximately 95 degrees toapproximately 110 degrees (e.g., see FIGS. 8A and 8B). Further, asdescribed above with reference to FIGS. 8A and 8B, each of the pluralityof nozzles (420 b 1, 420 b 2) may be configured to generate a flow rateof pressurized cleaning fluid that is a range from approximately 4liters/min to approximately 6 liters/minute.

FIG. 11 is a three-dimensional perspective view of a portion of thesystem 400 of FIGS. 4 and 5 illustrating details of the dryer 406,according to various embodiments. FIG. 12 is a side view of a portion ofthe dryer 406 and a housing 1202, according to various embodiments. Thedryer 406 may be configured as a jet air knife configured to generatethe pressurized gas flow having a pressure in a range from approximately0.02 MPa to approximately 0.08 MPa at a distance from the semiconductorpackage assembly 200 that is in a range from approximately 0 mm toapproximately 20 mm. In this regard, the jet air knife may include animpeller 1102 the generates a pressurized gas flow that may be directedtoward the semiconductor package assembly 200 through a gas nozzle 1104,as shown in FIG. 11 .

As shown in FIG. 11 , the gas nozzle 1104 may have an aperture having alength and a width, wherein the length is larger than the width. Asshown, the aperture may be oriented such that a lengthwise extension ofthe aperture is aligned with a second direction (i.e., the y-direction).According to an embodiment, the length of the aperture may be greaterthan or equal to approximately 150 mm. As shown in FIG. 12 , the dryer406 may further include a housing 1202 that is configured to allows aposition of the gas nozzle 1104 to be adjusted by rotating the gasnozzle through an angle 1204 about an axis parallel to the seconddirection. The housing 1202 may further be configured to allow a lateralposition 1206 of the gas nozzle 1104 to be adjusted along the seconddirection (i.e., the y-direction). A vertical position 1208 of the gasnozzle 1104 may be adjusted and along a third direction (i.e., thez-direction) that is perpendicular to the first direction and to thesecond direction.

FIG. 13 is a graph showing a measured spray impact force 902 (e.g., seeFIG. 9B) generated by the dryer 406, according various embodiments.Various embodiment dryer 406 configurations were tested with differentaperture sizes. In this regard, the aperture length (i.e., slit length)was varied in a range from approximately 0 mm to approximately 800 mm.As shown, a spray impact force 902 was generated having a magnitude in arange from approximately 0.05 N/cm to approximately 0.057 N/cm. This gasflow corresponds to a pressuring in a range from 0.02 MPa toapproximately 0.08 MPa at a distance from an impact surface (e.g., asurface of the semiconductor package assembly 200) that is in a rangefrom approximately 0 mm to approximately 20 mm.

FIG. 14 is a flowchart illustrating various operations of a method 1400of cleaning a semiconductor package assembly 200, according to variousembodiments. In operation 1402, the method 1400 may include moving thesemiconductor package assembly 200 along a first direction (e.g., thex-direction) relative to a sprayer device 402 and a dryer 406 using aconveyor 702. The sprayer device 402 and the dryer 406 may be spatiallydisplaced relative to one another along the first direction such thatthe semiconductor package assembly 200 moves past the sprayer device 402before moving past the dryer 406 (e.g., see FIGS. 4 and 5 ). Inoperation 1404, the method 1400 may include directing a pressurizedcleaning fluid 302 toward the semiconductor package assembly 200, usingthe sprayer device 402, while the semiconductor package assembly 200moves past the sprayer device 402.

In operation 1406, the method 1400 may include directing a pressurizedgas 304 flow toward the semiconductor package assembly 200, using thedryer 406, while the semiconductor package assembly 200 moves past thedryer 406. In operation 1408, the method 1400 may further includegenerating a plurality of spray distribution patterns (e.g., see FIGS.8A to 9C) using a plurality of fluidic nozzles (420, 420 a, 420 b) thatare displaced from one another along a second direction (e.g., they-direction). In operation 1410, the method 1400 may further includereducing an overlap of adjacent spray distribution patterns (e.g., seeFIGS. 8B and 9C) relative to a configuration in which the adjacentnozzles are not displaced from one another along the directionperpendicular to the second direction.

In further embodiments, the method 1400 may include generating each ofthe plurality of spray distribution patterns using a fluidic nozzle(420, 420 a, 420 b) that has an asymmetric shape 1004 (e.g., see FIG.10C) such that each spray distribution pattern has a first spatialextent along the first direction (i.e., along the x-direction) that isless than a second spatial extent along the second direction (i.e.,along the y-direction), and such that the second spatial extent of eachspray distribution pattern subtends an angle that is in a range fromapproximately 95 degrees to approximately 110 degrees (e.g., see FIGS.8A and 8B). In further embodiments, the method 1400 may further includegenerating, using a jet air knife (e.g., see FIGS. 11 to 13 ), thepressured gas 304 flow having a pressure in a first range fromapproximately 0.02 MPa to approximately 0.08 MPa at a distance from thesemiconductor package assembly that is in a range from approximately 0mm to approximately 20 mm.

In further embodiments, the method 1400 may further include adjusting aposition or angle 1204 (e.g., see FIG. 12 ) of a gas nozzle 1104 of thejet air knife by performing one or more operations including rotatingthe gas nozzle by an angle 1204 about an axis parallel to the seconddirection (e.g., the y-direction), and adjusting the lateral position1206 of the gas nozzle along the second direction (e.g., they-direction) or a vertical position 1208 along a third direction (e.g.,the z-direction) that is perpendicular to the first direction and thesecond direction.

Referring to drawings and according to various embodiments of thepresent disclosure, a system 400 (e.g., see FIGS. 4, 5, and 11 )configured to clean a semiconductor package assembly 200 is provided.The system may include a sprayer device 402 including a plurality ofnozzles 420 configured to direct a pressurized cleaning fluid 302 towardthe semiconductor package assembly 200; a conveyor 702 configured tomove the semiconductor package assembly 200 assembly relative to thesprayer device 402 along a first direction (e.g., the x-direction); anda dryer 406 spatially displaced from the sprayer device 402 along thefirst direction and configured to direct a pressurized gas 304 flow atthe semiconductor package assembly 200 to remove cleaning fluidintroduced by the sprayer device 402.

Each of the plurality of nozzles 420 may be displaced from one anotheralong a second direction (i.e., the y-direction) to thereby generaterespective separate spray distribution patterns (e.g., see FIGS. 8A to9C). Further, adjacent nozzles (420 b 1, 420 b 2) may be displaced fromone another along a third direction (which may coincide with the firstdirection) perpendicular to the second direction to thereby a reduce anoverlap of adjacent spray distribution patterns (e.g., see FIGS. 8A to10C) relative to a configuration in which the adjacent nozzles are notdisplaced from one another along the third direction.

In an embodiment, the sprayer device 402 may further include a fluidicconduit 418 extending along the second direction and configured tosupply the pressurized cleaning fluid 302 to the plurality of nozzles420, with the plurality of nozzles 420 being attached, and fluidicallycoupled, to the fluidic conduit 418. The fluidic conduit 418 may beformed as a cylindrical tube with a longitudinal axis that is orientedalong the second direction (e.g., see FIGS. 8A and 8B). A firstplurality of nozzles 420 b 1 may be aligned with one another along aradial direction, of the cylindrical tube, with the radial directionbeing perpendicular to the longitudinal axis. A second plurality ofnozzles 420 b 2 may be located between adjacent ones of the firstplurality of nozzles 420 b 1, and the second plurality of nozzles 420 b2 may be displaced along a direction perpendicular to the radialdirection relative to the first plurality of nozzles 420 b 1 (e.g., seeFIG. 10C). In an embodiment, the conveyor 702 may be configured toposition the semiconductor package assembly 200 at a distance from theplurality of nozzles 420 that is in a range from approximately 0 mm toapproximately 50 mm (e.g., see FIGS. 7A to 8B).

In one embodiment, each of the plurality of nozzles (420, 420 a, 420 b)may have an asymmetric shape 1004 (e.g., see FIG. 10C) such that eachspray distribution pattern has a first spatial extent along the firstdirection that is less than a second spatial extent along the seconddirection. In one embodiment, a spatial extent of each spraydistribution pattern may subtend an angle that is in a range fromapproximately 95 degrees to approximately 110 degrees (e.g., see FIGS.8A and 8B). In one embodiment, each of the plurality of nozzles 420 maybe configured to generate a flow rate of pressurized cleaning fluid thatis a range from approximately 4 liters/min to approximately 6liters/minute (e.g., see FIGS. 8A and 8B). In one embodiment, the dryer406 may be configured as a jet air knife (e.g., see FIGS. 11 and 12 )configured to generate the pressurized gas flow having a pressure in afirst range from approximately 0.02 MPa to approximately 0.08 MPa (e.g.,see FIG. 13 ) at a distance from the semiconductor package assembly thatis in a second range from approximately 0 mm to approximately 20 mm.

The dryer 406 may have a gas nozzle 1104 that has an aperture having alength and a width, wherein the length is larger than the width (e.g.,see FIGS. 11 and 12 ), and the aperture may be oriented such that alengthwise extension of the aperture is aligned with a second direction.In various embodiments, the length of the aperture may be greater thanor equal to approximately 150 mm. The dryer 406 may further include ahousing 1202 that is configured to allow a position of the gas nozzle1104 to be adjusted such that an angle 1204 of the gas nozzle may beadjusted by rotating the gas nozzle about an axis parallel to the seconddirection (e.g., see FIG. 12 ). Further, the housing is configured toallow the position 1206 of the gas nozzle 1104 to be adjusted along thesecond direction and the position 1208 along a third direction that isperpendicular to the first direction and to the second direction (e.g.,see FIG. 12 ).

The conveyor may include a conveyor belt 702 and a plurality of rollers404 that are configured to move the conveyor belt 702 along the firstdirection (e.g., see FIGS. 7A and 7B). The conveyor may further beconfigured such that the semiconductor package assembly 200 may bepositioned on the conveyor belt 702 and may be moved along with theconveyor belt 702 relative to the sprayer device 402 and the dryer 406.The conveyor belt 702 may further include a mesh material (e.g., seeFIG. 7A) having a first portion 702 a and a second portion 702 b (e.g.,see FIG. 7B) such that the semiconductor package assembly 200 may besandwiched between the first portion 702 a and the second portion 702 b.

Disclosed systems may provide advantages over existing systems forcleaning semiconductor package assemblies. In this regard, disclosedsystems provide an improved cleaning efficiency by providing sprayerdevices that achieve a more uniform distribution of pressurized cleaningfluid that may be directed to the semiconductor package assembly. Theimproved distribution of pressurized cleaning fluid may be achieved byusing a sprayer device in which nozzles may be placed closer togetheralong one direction and in which adjacent nozzles may be furtherdisplaced relative to one another along a another direction. Disclosedsystems may further improve cleaning efficiency by providing an dryerhaving an jet air knife that provides a high pressure gas flow that mayhave increased drying efficiency and an increased efficiency of cleaningfluid removal from semiconductor package assembly, including cleaningfluid removal from spaces within the package lid.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of this disclosure.Those skilled in the art should appreciate that they may readily use thepresent disclosure as a basis for designing or modifying other processesand structures for carrying out the same purposes and/or achieving thesame advantages of the embodiments introduced herein. Those skilled inthe art should also realize that such equivalent constructions do notdepart from the spirit and scope of this disclosure, and that they maymake various changes, substitutions, and alterations herein withoutdeparting from the spirit and scope of the present disclosure.

What is claimed is:
 1. A system configured to clean a semiconductorpackage assembly, comprising: a sprayer device comprising a plurality ofnozzles configured to direct a pressurized cleaning fluid toward thesemiconductor package assembly; a conveyor configured to move thesemiconductor package assembly relative to the sprayer device along afirst direction; and a dryer spatially displaced along the firstdirection from the sprayer device and configured to direct a pressurizedgas flow at the semiconductor package assembly to remove cleaning fluidintroduced by the sprayer device, wherein each of the plurality ofnozzles are displaced from one another along a second direction tothereby generate respective separate spray distribution patterns, andwherein adjacent nozzles are displaced from one another along a thirddirection perpendicular to the second direction to thereby a reduce anoverlap of adjacent spray distribution patterns relative to aconfiguration in which the adjacent nozzles are not displaced from oneanother along the third direction.
 2. The system of claim 1, wherein thesprayer device further comprises: a fluidic conduit extending along thesecond direction and configured to supply the pressurized cleaning fluidto the plurality of nozzles, wherein the plurality of nozzles areattached, and fluidically coupled, to the fluidic conduit.
 3. The systemof claim 2, wherein the fluidic conduit comprises a cylindrical tubewith a longitudinal axis that is oriented along the second direction,wherein a first plurality of nozzles are aligned with one another alonga radial direction, of the cylindrical tube, the radial direction beingperpendicular to the longitudinal axis, wherein a second plurality ofnozzles are located between adjacent ones of the first plurality ofnozzles, and wherein the second plurality of nozzles are displaced alonga direction perpendicular to the radial direction relative to the firstplurality of nozzles.
 4. The system of claim 1, wherein the conveyor isconfigured to position the semiconductor package assembly at a distancefrom the plurality of nozzles that is in a range from approximately 0 mmto approximately 50 mm.
 5. The system of claim 1, wherein each of theplurality of nozzles has an asymmetric shape such that each spraydistribution pattern has a first spatial extent along the firstdirection that is lesser than a second spatial extent along the seconddirection.
 6. The system of claim 5, wherein a spatial extent of theeach spray distribution pattern subtends an angle that is in a rangefrom approximately 95 degrees to approximately 110 degrees.
 7. Thesystem of claim 1, wherein each of the plurality of nozzles isconfigured to generate a flow rate of the pressurized cleaning fluidthat is a range from approximately 4 liters/min to approximately 6liters/minute.
 8. The system of claim 1, wherein the dryer is configuredas a jet air knife configured to generate the pressurized gas flowhaving a pressure in a first range from approximately 0.02 MPa toapproximately 0.08 MPa at a distance from the semiconductor packageassembly that is in a second range from approximately 0 mm toapproximately 20 mm.
 9. A system configured to clean a semiconductorpackage assembly, comprising: a sprayer device comprising a plurality offluidic nozzles configured to direct a pressurized cleaning fluid at thesemiconductor package assembly; a conveyor configured to move thesemiconductor package assembly relative to the sprayer device along afirst direction; and a dryer spatially displaced from the sprayer devicealong the first direction and configured to direct a pressurized gasflow toward the semiconductor package assembly to remove cleaning fluidintroduced by the sprayer device, wherein the dryer is configured as ajet air knife configured to generate the pressurized gas flow having apressure in a third range from approximately 0.02 MPa to approximately0.08 MPa at a distance from the semiconductor package assembly that isin a range from approximately 0 mm to approximately 20 mm.
 10. Thesystem of claim 9, wherein the dryer has a gas nozzle that has anaperture having a length and a width, wherein the length is larger thanthe width, and wherein the aperture is oriented such that a lengthwiseextension of the aperture is aligned with a second direction.
 11. Thesystem of claim 10, wherein the length of the aperture is greater thanor equal to approximately 150 mm.
 12. The system of claim 10, whereinthe dryer further comprises a housing that is configured to allow aposition of the gas nozzle to be adjusted such that an angle of the gasnozzle may be adjusted by rotating the gas nozzle about an axis parallelto the second direction.
 13. The system of claim 12, wherein the housingis configured to allow the position of the gas nozzle to be adjustedalong the second direction and along a third direction that isperpendicular to the first direction and to the second direction. 14.The system of claim 10, wherein the conveyor further comprises aconveyor belt and a plurality of rollers that are configured to move theconveyor belt along the first direction, and wherein the conveyor isconfigured such that the semiconductor package assembly may bepositioned on the conveyor belt and may be moved along with the conveyorbelt relative to the sprayer device and the dryer.
 15. The system ofclaim 14, wherein the conveyor belt further comprises a mesh materialhaving a first portion and a second portion such that the semiconductorpackage assembly may be sandwiched between the first portion and thesecond portion.
 16. The system of claim 10, wherein each of theplurality of fluidic nozzles are displaced from one another along thesecond direction to thereby generate separate respective spraydistribution patterns, and wherein adjacent fluidic nozzles aredisplaced from one another along a direction perpendicular to the seconddirection to thereby reduce an overlap of adjacent spray distributionpatterns relative to a configuration in which the adjacent fluidicnozzles are not displaced from one another along the directionperpendicular to the second direction.
 17. A sprayer device for asemiconductor package assembly cleaning system, comprising: a pluralityof fluidic nozzles configured to direct a pressurized cleaning fluidtoward a semiconductor package assembly as the semiconductor packageassembly is moved along a first direction relative to the sprayerdevice, wherein each of the plurality of fluidic nozzles are displacedfrom one another along a second direction, wherein the plurality offluidic nozzles comprises a first plurality of fluidic nozzles and asecond plurality of fluidic nozzles that are located between adjacentones of the first plurality of fluidic nozzles, and wherein the secondplurality of fluidic nozzles are further displaced from the firstplurality of fluidic nozzles along a direction perpendicular to thesecond direction.
 18. The sprayer device of claim 17, wherein each ofthe plurality of fluidic nozzles has an asymmetric shape that generatesa spray distribution pattern having a first spatial extent along thefirst direction that is smaller than a second spatial extent along thesecond direction.
 19. The sprayer device of claim 18, wherein the secondspatial extent of each spray distribution pattern subtends an angle thatis in a range from approximately 95 degrees to approximately 110degrees.
 20. The sprayer device of claim 17, further comprising: afluidic conduit comprising a cylindrical tube to which the plurality offluidic nozzles are attached and to which the plurality of fluidicnozzles are fluidically coupled, wherein the first plurality of fluidicnozzles are aligned with one another along a radial direction of thecylindrical tube, the radial direction being perpendicular to alongitudinal axis of the cylindrical tube, and wherein the directionalong which the second plurality of fluidic nozzles are displaced isfurther perpendicular to the radial direction.